Silicon RF Power Mosfets

World Scientific Publishing Company, 2005. hardcover. Very Good. 6x1x9. 2005 signed and inscribed first edition, World Scientific (New Hackensack, New Jersey), 6 1/4 x 9 1/4 inches tall pictorial hardcover, no dust jacket (as issued), black endpapers, copiously illustrated with black-and-white and color drawings an d diagrams, index, xvi, 302 pp. Slight abrasions and edgewear to covers. Nicely signed and inscribed by the author to a colleague on the half title page. Otherwise, a very good copy - clean, bright and unmarked. ~OOO~ [2.0P] The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and even streaming video. The deployment of digital networks has required migration to multi-carrier RF power amplifiers with stringent demands on linearity and efficiency. This book describes the physics, design considerations and RF performance of silicon power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) that are at the heart of the power amplifiers. The invention and commercialization of RF power MOSFETs based on the super-linear mode of operation is described. In addition to the analytical treatment of the physics, extensive description of transistor operation is provided by using the results of numerical simulations. Many novel power MOSFET structures are analyzed and their performance is compared with those of the laterally-diffused (LD) MOSFET that are currently used in 2G and 3G networks.